A dechanneling investigation of MeV oxygen implanted silicon

Axial channeling of H+ and He+ particles was used to study the residual damage in silicon after MeV oxygen ion implantation, prior to annealing. The comparison between the energy dependence of dechanneling and direct backscattering at defects confirms the presence of a mixing of point defects and partial dislocations observed by electron microscopy. The absolute concentrations of point defects and Frank dipoles are followed as a function of beam power density. (orig.)