Observation of interstitial Zn diffusion from thin ZnO film into Si substrate

Published 2015 | Version v1

Miscellaneous Metadata-only

1. Inst. Ionno-Plazmennykh i Lazernykh Tekhnologij ANRUz, Tashkent (Uzbekistan)
2. Quantum-Functional Semiconductor Research Center, Dongguk Univ., Seoul (Korea, Republic of)

no abstract available

Additional details

Original title (Russian): Наблюдение диффузии межузельного Зн из тонкой пленки ZnO в Си подложку

Publisher: Universitetskaya kniga
Imprint Place: Moscow (Russian Federation)
Imprint Title: Summaries of reports of XLV International Tulinov conference on physics of interactions of charged particles with crystals
Imprint Pagination: 190 p.
Journal Page Range: p. 142
Report number: INIS-RU--607

Title: 45. International Tulinov conference on physics of interactions of charged particles with crystals
Original Conference Title: XLV mezhdunarodnaya Tulinovskaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates: 26-28 May 2015
Place: Moscow (Russian Federation)

Country of Publication: Russian Federation
Country of Input or Organization: Russian Federation
INIS RN: 49086316
Subject category: S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator: No Abstract, Conference, Numerical Data
Descriptors DEI: CONCENTRATION RATIO; CRYSTAL DOPING; EXPERIMENTAL DATA; INTERSTITIALS; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; P-TYPE CONDUCTORS; SILICON; SPATIAL DISTRIBUTION; SUBSTRATES; THIN FILMS; ZINC OXIDES
Descriptors DEC: CHALCOGENIDES; CHEMICAL ANALYSIS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; DIMENSIONLESS NUMBERS; DISTRIBUTION; ELEMENTS; FILMS; INFORMATION; MATERIALS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTROSCOPY; ZINC COMPOUNDS

Notes: 2 refs. Imprint:Tezisy dokladov XLV mezhdunarodnoj Tulinovskoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami