Published 1998 | Version v1
Miscellaneous Metadata-only

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective metal organic vapour phase epitaxy

Creators

  • 1. Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CRHEA-CNRS, Valbonne (France)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 27

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064543
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
CRYSTAL DEFECTS; DOPED MATERIALS; GALLIUM NITRIDES; MAGNESIUM ADDITIONS; MEETINGS; ORGANOMETALLIC COMPOUNDS; SAPPHIRE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY
Descriptors DEC
ALLOYS; CORUNDUM; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; MAGNESIUM ALLOYS; MATERIALS; MICROSCOPY; MINERALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDE MINERALS; PNICTIDES

Optional Information