Published January 1996
| Version v1
Journal article
On the oxygen atom position in the silicon lattice at high doses of implantation
Creators
Description
Short communication
Additional details
Additional titles
- Original title (Russian)
- Местоположение атомов кислорода в решетке кремния при больших дозах внедрения
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 39
- Journal Issue
- 1
- Journal Page Range
- p. 127.
- ISSN
- 0021-3411
- CODEN
- IVUFAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28003845
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ATOMS; BACKSCATTERING; HELIUM IONS; INTERSTITIALS; ION IMPLANTATION; OXYGEN; RADIATION DOSES; RESONANCE SCATTERING; SILICON; TETRAGONAL LATTICES
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELEMENTS; INELASTIC SCATTERING; IONS; NONMETALS; POINT DEFECTS; SCATTERING; SEMIMETALS