Published June 1981
| Version v1
Journal article
Estimate of the contribution of excitation of the 2+(1.78 MeV) level of silicon to the cross section for the reaction 28Si(π, 3π)28Si'
Creators
- 1. Nuclear Physics Institute, Moscow State University
Description
It is shown that the filling of the diffraction minimum in the differential cross section for production of three pions in a live silicon target is due to the contribution of events involving excitation of the low-lying level 2+(1.78 MeV)
Additional details
Publishing Information
- Journal Title
- Sov. J. Nucl. Phys. (Engl. Transl.)
- Journal Volume
- 33
- Journal Issue
- 6
- Series
- Sov. J. Nucl. Phys. (Engl. Transl.).
- Journal Page Range
- 775-777
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14745112
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Descriptors DEI
- CROSS SECTIONS; DIFFRACTION MODELS; EXCITATION; GEV RANGE 10-100; PION MINUS REACTIONS; PIONS; SILICON 28 TARGET
- Descriptors DEC
- BOSONS; ELEMENTARY PARTICLES; ENERGY RANGE; ENERGY-LEVEL TRANSITIONS; GEV RANGE; HADRON REACTIONS; HADRONS; MATHEMATICAL MODELS; MESON REACTIONS; MESONS; NUCLEAR REACTIONS; PARTICLE MODELS; PION REACTIONS; PSEUDOSCALAR MESONS; TARGETS