Published January 12, 2015
| Version v1
Journal article
Comment on "Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor" [Appl. Phys. Lett. 105, 082108 (2014)]
- 1. Department of Electrical and Computer Engineering and Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.4905865;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 2
- Journal Page Range
- p. 026102-026102.2
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46104840
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CONFINEMENT; ELECTRONS; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLES; LAYERS; QUANTUM MECHANICS; TUNNEL EFFECT
- Descriptors DEC
- ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; MECHANICS; METALS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC