The influence of reducing the chalcogen to metal ratio on phase transitions during the crystallisation of photovoltaic materials CuIn(S,Se)2
Creators
- 1. Lehrstuhl fuer Kristallographie und Strukturphysik, FAU, Erlangen (Germany)
- 2. Avancis GmbH and Co. KG, Muenchen (Germany)
- 3. Materials for Electronics and Energy Technology, FAU, Erlangen (Germany)
Description
Time resolved monitoring of the crystallisation of the thin film absorber materials CuIn(S,Se)2 while annealing stacked elemental layers (SEL) yields phase transitions proceeding during the chalcopyrite synthesis. In-situ XRD and DSC measurements on similar processed precursors provide complementary information on intermediate phases and the reaction kinetics of the chalcopyrite formation can be obtained. Thin layers of metals and chalcogens are deposited onto Mo-coated substrates by DC-magnetron sputtering and thermal evaporation, respectively. The XRD powder diagrams recorded while annealing the SEL are quantitatively analysed by Rietveld refinements. Miscellaneous binary selenides and sulfides as well as ternary sulfoselenides are observed by the chalcogenisation of the intermetallic alloy yielding different educts for the chalcopyrite formation depending on the chalcogen content. The presented study is focused on the influence of reducing the chalcogen to metal ratio on the processing of photovoltaic materials CuIn(S,Se)2.
Additional details
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Issue
- Regensburg 2010 issue
- Series
- Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 45(3)
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- DPG Spring meeting 2010 of the condensed matter section with the divisions biological physics, chemical and polymer physics, crystallography, dielectric solids, dynamics and statistical physics, low temperature physics, magnetism, metal and material physics, physics of socio-economic systems, radiation and medical physics, semiconductor physics, surface science, thin films, vacuum science and technology as well as the working group industry and business, with job market, symposia, teachers' days, tutorials, exhibition of scientific instruments and literature
- Dates
- 21-26 Mar 2010
- Place
- Regensburg (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 42057489
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BINARY ALLOY SYSTEMS; COATINGS; COPPER ALLOYS; COPPER SELENIDES; COPPER SULFIDES; CRYSTALLIZATION; DEBYE-SCHERRER METHOD; INDIUM ALLOYS; INDIUM SELENIDES; INDIUM SULFIDES; LAYERS; MOLYBDENUM; SELENIUM; SPUTTERING; SUBSTRATES; SULFUR; TETRAGONAL LATTICES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; DIFFRACTION METHODS; ELEMENTS; FILMS; HEAT TREATMENTS; INDIUM COMPOUNDS; METALS; NONMETALS; PHASE TRANSFORMATIONS; REFRACTORY METALS; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- Session: MM 31.1 Mi 11:45; No further information available