Published February 2, 2005 | Version v1
Journal article

Surface stress oscillation in Mo(001) thin films

  • 1. Department of Physics, Colorado State University, Fort Collins, CO 80523 (United States)
  • 2. Department of Chemical Engineering, Colorado State University, Fort Collins, CO 80523 (United States)

Description

The surface stress was evaluated employing a composite elastic model using the first-principles full-potential linearized augmented plane-wave (FP-LAPW) method for 5, 7 and 9 monolayer (ML) Mo(001) thin films. The surface stress calculated from previously derived slope and curvature methods yields a very similar result. The surface stress is found to vary with the number of the Mo thin film layers. This variation is found to be consistent with the existence of quantum well states in these thin films

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/17/581/cm5_4_002.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
17
Journal Issue
4
Journal Page Range
p. 581-586
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36035480
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL STRUCTURE; LAYERS; MOLYBDENUM; OSCILLATIONS; POTENTIALS; STRESSES; SURFACES; THIN FILMS; VARIATIONS
Descriptors DEC
ELEMENTS; FILMS; METALS; REFRACTORY METALS; TRANSITION ELEMENTS