Published May 2018 | Version v1
Journal article

Structural elucidation, and morphological and magnetic behavior evaluations, of low-temperature sintered, Ce-doped, nanostructured garnet ferrites

  • 1. Department of Physics, Muhammad Nawaz Sharif University of Engineering and Technology (MNSUET), 60000 Multan (Pakistan)
  • 2. Department of Mathematics, Muhammad Nawaz Sharif University of Engineering and Technology (MNSUET), 60000 Multan (Pakistan)
  • 3. Department of Chemical Engineering, Muhammad Nawaz Sharif University of Engineering and Technology (MNSUET), 60000 Multan (Pakistan)

Description

Highlights: • CexGd3.5-xFe4.5O12 were synthesized via sol gel self-combustion route. • Crystallite size was found in the range of 20–38 nm. • Morphology of Ce-Gd doped and undoped garnets were observed systematically. • Switching field distribution was calculated for further applications of the nanoferrites. • These garnets also have potential applications in microwave high frequency devices. - Abstract: Low-temperature sintered CexGd3.5-xFe4.5O12 (x = 0.0, 0.4, 0.8, 1.2, 1.6, 2.0 and 2.4) garnet ferrites were synthesized via a sol-gel self-combustion route. Phase, structure, morphology and magnetic investigations were done using FTIR, XRD, FESEM, and VSM, respectively. Single-phase structures of all Ce3+ substituted nano-sized garnet ferrites were confirmed through XRD. The crystallite size was decreased with Ce3+incorporation. Relevant structural parameters such as site radii, bond lengths, ionic radii, and shared edges were calculated using XRD. The vibrational spectroscopy stretching band studies were also done using FTIR. The grain size and morphology were also analyzed using FESEM. The magnetic remanance, saturation, and coercivity were found to increase systematically with an increase in Ce3+ concentration in these garnets. Switching field distribution curves were also plotted using the first derivative of the demagnetization data from MH loops. The better magnetic properties of these nanogarnets suggest their use for miniaturization of the devices in various applications.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.materresbull.2018.01.009

Additional details

Identifiers

DOI
10.1016/j.materresbull.2018.01.009;
PII
S0025540817325977;

Publishing Information

Journal Title
Materials Research Bulletin
Journal Volume
101
Journal Page Range
p. 48-55
ISSN
0025-5408
CODEN
MRBUAC

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.