Published December 17, 2012 | Version v1
Journal article

Novel Field-Induced Quantum Phase Transition of the Kagome-Lattice Antiferromagnet

  • 1. Japan Atomic Energy Agency, SPring-8, Sayo, Hyogo 679-5148 (Japan)
  • 2. Graduate School of Material Science, University of Hyogo, Kamigori, Hyogo 678-1297 (Japan)

Description

The magnetization process of the S = 1/2 kagome-lattice quantum antiferromagnet is investigated using the numerical exact diagonalization up to 39-site clusters. The finite-size scaling analysis with the rohmbic clusters indicated the "magnetization ramp" as a novel field-induced quantum phase transition at 1/3 of the saturation magnetization. The magnetization ramp is characterized by the following properties; (i) the field derivative dm/dH is divergent at the lower-field side, (ii) dm/dH is vanishing at the higher-field side, and (iii) there is a single critical field Hc (no plateau). Applying the critical exponent analysis for the non-rohmbic clusters, as well as the rohmbic ones, we confirmed the above properties of the magnetization at 1/3 of the saturation for the kagome lattice antiferromagnet.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/400/3/032076

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
400
Journal Issue
3
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
26. international conference on low temperature physics
Acronym
LT26
Dates
10-17 Aug 2011
Place
Beijing (China)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44040160
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; CRITICAL FIELD; CRYSTAL LATTICES; MAGNETIZATION; PHASE TRANSFORMATIONS
Descriptors DEC
CRYSTAL STRUCTURE; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETISM; MATERIALS