Published August 2011
| Version v1
Journal article
Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties
- 1. Russian Academy of Sciences, Institute for Analytical Instrumentation (Russian Federation)
- 2. Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)
Description
A method for the formation of single GaAs semiconductor nanowhiskers and their assemblies on the tip of a chemically etched tungsten needle by molecular-beam epitaxy is proposed. The focused-ionbeam technique was used to separate a single nanowhisker. Electronic properties of single nanowhiskers were studied by elastic tunneling spectroscopy in ultrahigh vacuum. The band gap and the doping level of GaAs whiskers were determined using the current-voltage characteristics obtained from these measurements.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 45
- Journal Issue
- 8
- Journal Page Range
- p. 1049-1052
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094861
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRICAL PROPERTIES; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TUNGSTEN; TUNNEL EFFECT; WHISKERS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; METALS; MONOCRYSTALS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METALS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2011 Pleiades Publishing, Ltd.