Published October 1985
| Version v1
Journal article
Transmission electron microscopic observation of microdefects in Zn+-implanted GaAs
- 1. Sony Corp., Yokohama (Japan). Research Lab.
Description
Transmission electron microscopic (TEM) observation of GaAs implanted with 100 keV Zn+ ions to 1014 ∼ 1015 ions/cm2 and annealed at 650 ∼ 950 deg C by capless annealing in As ambient revealed precipitates, stacking-fault tetrahedra (SFTs) and stacking-fault pyramids (SFPs). The precipitates, distributed from near Rp to greater depths, consisted of non-crystalline material of mean inner potential smaller than that of GaAs. Defects showing black-white contrast were found to be SFTs accompanied by a precipitate or SFPs. Two types of SFTs can be differentiated by the core structure of their stair-rod dislocations. Most of the SFTs observed were identified as β-SFTs and very few SFPs were observed. (author)
Additional details
Publishing Information
- Journal Title
- Jpn. J. Appl. Phys., Part 1
- Journal Volume
- 24
- Journal Issue
- 10
- Series
- Jpn. J. Appl. Phys., Part 1.
- Journal Page Range
- 1274-1281
- CODEN
- JAPND
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 18006904
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNEALING; CHROMIUM; DEFECTS; DISLOCATIONS; DOPED MATERIALS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; ION IMPLANTATION; PRECIPITATION; STACKING FAULTS; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCO; ZINC IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; ELECTRON MICROSCOPY; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; IONS; LINE DEFECTS; MATERIALS; METALS; MICROSCOPY; NUMERICAL DATA; SEPARATION PROCESSES; TRANSITION ELEMENTS