Published May 2002
| Version v1
Journal article
Diffusion of Sm and Gd in silicon
- 1. National University of Uzbekistan, Tashkent (Uzbekistan)
Description
The diffusion properties of Sm and Gd in Si were investigated in a wide temperature range (1100-1250degC) and various annealing environments. The acceptor nature of these impurities was revealed. Their diffusion and mobility parameters were determined. (author)
Additional details
Additional titles
- Original title (Russian)
- Диффузия самария и гадолиния в кремнии
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 4
- Journal Issue
- 1
- Journal Page Range
- p. 66-68
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 34054866
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; DIFFUSION; ELECTRIC CONDUCTIVITY; GADOLINIUM; HALL EFFECT; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; RARE EARTHS; SAMARIUM; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; PHYSICAL PROPERTIES; RARE EARTHS; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- 1 fig., 1 tab., 12 refs.