Published 1992
| Version v1
Report
Restricted
Temperature dependence of radiation damage and its annealing in silicon detectors
Creators
- Ziock, H.J.1
- Boissevain, J.G.1
- Holzscheiter, K.1
- Kapustinsky, J.S.1
- Palounek, A.P.T.1
- Sondheim, W.E.1
- Barberis, E.2
- Cartiglia, N.2
- Leslie, J.2
- Pitzl, D.2
- Rowe, W.A.2
- Sadrozinski, H.F.W.2
- Seiden, A.2
- Spencer, E.2
- Wilder, M.2
- Ellison, J.A.3
- Fleming, J.K.3
- Jerger, S.3
- Joyce, D.3
- Lietzke, C.3
- Reed, E.3
- Wimpenny, S.J.3
- Ferguson, P.4
- Frautschi, M.A.5
- Matthews, J.A.J.5
- Skinner, D.5
- 1. Los Alamos National Lab., NM (United States)
- 2. California Univ., Santa Cruz, CA (United States). Inst. for Particle Physics
- 3. California Univ., Riverside, CA (United States)
- 4. Missouri Univ., Rolla, MO (United States)
- 5. New Mexico Univ., Albuquerque, NM (United States)
Description
The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, we plan to operate the detectors at reduced temperatures (∼0 degree C). In this paper, we present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 1014/cm2 650 MeV protons. Very pronounced temperature dependencies were observed
Availability note (English)
MF available from INIS under the Report Number; OSTI as DE93003854; NTIS; INIS; US Govt. Printing Office Dep.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- LA-UR--92-3827
Conference
- Title
- Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium.
- Dates
- 26-31 Oct 1992.
- Place
- Orlando, FL (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24047966
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SILICON; SUPERCONDUCTING SUPER COLLIDER; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ACCELERATORS; CYCLIC ACCELERATORS; ELEMENTS; HEAT TREATMENTS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATION EFFECTS; SEMIMETALS; STORAGE RINGS; SYNCHROTRONS
Optional Information
- Contract/Grant/Project number
- Contract W-7405-ENG-36
- Funding organization
- USDOE, Washington, DC (United States).
- Secondary number(s)
- CONF-921005--8.