Published 1989 | Version v1
Journal article Metadata-only

Study on the compensation mechanisms of CuInS2

Creators

  • 1. National Sun Yat-Sen University, Department of Electrical Engineering, Kaoshung, Taiwan, R.O.C.
  • 2. National Tsing Hua University, Department of Electrical Engineering, Hsinchu, Taiwan, R.O.C.

Description

Combining the studies of electrical, photoluminescence and chemical compositional analyses, the defect structure and compensation mechanisms of CuInS2 are revealed. The carrier concentrations as a function of temperature determined from our experiments and calculations showed reasonable agreements. A defect model was developed to illustrate the compensation effect of CuInS2 crystals, and that is the first 'quantitative' investigation on carrier concentration. (author) 14 refs., 6 figs., 2 tabs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
549-553
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062105
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL ANALYSIS; COPPER COMPOUNDS; CRYSTAL DEFECTS; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; SULFIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL STRUCTURE; EMISSION; LUMINESCENCE; PHOTON EMISSION; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS