Published February 2006
| Version v1
Journal article
On the absorption of linearly polarized radiation in a semiconductor-based nanostructure with hole conduction
- 1. Fergana State University, Fergana (Uzbekistan)
Description
The absorption of linearly polarized radiation in a dimensionally quantized semiconducting well, which is connected with optical transitions both between the light and heavy hole branches and between dimensionally quantized subbands, has been considered. The principal features of light absorption in an indefinitely deep symmetric well have been established
Additional details
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
- Journal Volume
- 51
- Journal Issue
- no.2
- Journal Page Range
- p. 192-199
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 39117915
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; DEFORMATION; GEOMETRY; GERMANIUM COMPOUNDS; MAGNETIC ISLANDS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; STRESS RELAXATION; VISIBLE RADIATION
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; EPITAXY; LASER SPECTROSCOPY; MAGNETIC FIELD CONFIGURATIONS; MATHEMATICS; MICROSCOPY; RADIATIONS; RELAXATION; SPECTROSCOPY