Radiation effect on glass-like silicon dioxide with hydroxyl impurity

The effect of various radiation types on the accumulation of non-bridge oxygen atoms (NOA) and peculiarities of their annealing in glass-like silicon dioxide with hydroxide impurity is considered. It is shown that in glass-like silicon dioxide at the temperature of liquid nitrogen the rate of NOA accumulation depends on the dose absorbed; in the initial part it is constant and with the increase in ionizing radiation dose the rate of centre accumulation decreases. By vacuum ultraviolet radiation the charge state of NOA is probably changed. Atomic hydrogen participates in the reduction of hydroxyl at the second stage 200-250 K