Published October 17, 2014
| Version v1
Journal article
GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy
Creators
- 1. National Institute of Standards and Technology, Boulder, CO 80305 (United States)
- 2. University of Colorado at Boulder, Boulder, CO 80309 (United States)
Description
GaN nanowires were coated with tungsten by means of atomic layer deposition. These structures were then adapted as probe tips for near-field scanning microwave microscopy. These probes displayed a capacitive resolution of ∼0.03 fF, which surpasses that of a commercial Pt tip. Upon imaging of MoS2 sheets with both the Pt and GaN nanowire tips, we found that the nanowire tips were comparatively immune to surface contamination and far more durable than their Pt counterparts. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/25/41/415502Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 25
- Journal Issue
- 41
- Journal Page Range
- [7 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46082670
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- GALLIUM NITRIDES; MICROSCOPY; MICROWAVE RADIATION; MOLYBDENUM SULFIDES; NANOWIRES; PLATINUM; RESOLUTION; SURFACE CONTAMINATION; TUNGSTEN
- Descriptors DEC
- CHALCOGENIDES; CONTAMINATION; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; METALS; MOLYBDENUM COMPOUNDS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PLATINUM METALS; PNICTIDES; RADIATIONS; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS