Published October 17, 2014 | Version v1
Journal article

GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

  • 1. National Institute of Standards and Technology, Boulder, CO 80305 (United States)
  • 2. University of Colorado at Boulder, Boulder, CO 80309 (United States)

Description

GaN nanowires were coated with tungsten by means of atomic layer deposition. These structures were then adapted as probe tips for near-field scanning microwave microscopy. These probes displayed a capacitive resolution of ∼0.03 fF, which surpasses that of a commercial Pt tip. Upon imaging of MoS2 sheets with both the Pt and GaN nanowire tips, we found that the nanowire tips were comparatively immune to surface contamination and far more durable than their Pt counterparts. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/25/41/415502

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
25
Journal Issue
41
Journal Page Range
[7 p.]
ISSN
0957-4484