Published March 16, 1986
| Version v1
Journal article
Molecular dynamics study of atomic configuration of point defects in intermetallic compound Mo3Si
- 1. AN SSSR, Sverdlovsk. Inst. Fiziki Metallov
- 2. AN SSSR, Ustinov. Physical Technical Institute
Description
Atomic configurations of vacancies, antisite replacements, and interstitials in Mo3Si are studied by molecular dynamics. According to calculations, distortions of the crystal lattice around antisite replacements and vacancies are the same. Dumb-bells of the Si atoms and the complexes antisite replacement - dumb-bells are found while simulating interstitials. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 94
- Journal Issue
- 1
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 147-152
- ISSN
- 0031-8965
- CODEN
- PSSAB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17066398
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CONFIGURATION INTERACTION; ELECTRONIC STRUCTURE; INTERATOMIC DISTANCES; INTERATOMIC FORCES; INTERMETALLIC COMPOUNDS; INTERSTITIALS; LATTICE PARAMETERS; MOLYBDENUM SILICIDES; VACANCIES
- Descriptors DEC
- ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTANCE; MOLYBDENUM COMPOUNDS; POINT DEFECTS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS