Published 1989 | Version v1
Journal article Metadata-only

The atomic structure of GaAs/AlGaAs interfaces and its correlation with the optical properties of quantum wells

Creators

  • 1. Bell Labs., Holmdel, NJ (USA)
  • 2. Bell Labs., Murray Hill, NJ (USA)

Description

We combine chemical lattice imaging with digital pattern recognition to obtain, at near-atomic resolution, quantitative maps of the compositional change across GaAs/AlGaAs interfaces of the highest optical quality. Our results show these interfaces to be atomically rough, on scales finer than suggested by optical measurements. (author) 5 refs., 3 figs

Additional details

Publishing Information

Journal Title
Materials Science Forum
Journal Volume
38-41
Series
Mater. Sci. Forum.
Journal Page Range
689-693
ISSN
0255-5476
CODEN
MSFOE

Conference

Title
15. International conference on defects in semiconductors (ICDS-15).
Dates
22-26 Aug 1988.
Place
Budapest (Hungary).

INIS

Country of Publication
Switzerland
Country of Input or Organization
Switzerland
INIS RN
20062126
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; INTERFACES; MOLECULAR BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE
Descriptors DEC
BEAMS; EMISSION; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES