Published August 19, 2002
| Version v1
Journal article
Densification of silica glass under pressure
Creators
- 1. Department of Earth Sciences, University of Cambridge, Cambridge (United Kingdom) and Cavendish Laboratories, University of Cambridge, Cambridge (United Kingdom)
- 2. Department of Earth Sciences, University of Cambridge. Cambridge (GB)
Description
We present the results of a simulation study of the effects of pressure on structural changes in silica glass. We observe structural relaxations in glass under pressure that involve large atomic displacements and are accompanied by breaking of the original bonds and forming of new ones. A large proportion of the new topological arrangements formed during pressurizing are preserved in structures on decompression, resulting in the irreversibility of topological changes. Substantial rebonding makes the mechanism of densification in glass essentially different from that present in transitions between crystalline silicas. We find that higher temperature promotes the degree of rebonding and densification in decompressed structure. (author)
Availability note (English)
Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-6448X) http://www.iop.org/Additional details
Identifiers
- URL
- http://www.iop.org/;
- DOI
- 10.1088/0953-8984/14/32/304;
- PII
- S0953-8984(02)37931-1;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 14
- Journal Issue
- 32
- Journal Page Range
- p. 7449-7459
- ISSN
- 0953-8984
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33048402
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC DISPLACEMENTS; CHEMICAL BONDS; COMPUTERIZED SIMULATION; GLASS; PHASE TRANSFORMATIONS; PRESSURE DEPENDENCE; SILICA
- Descriptors DEC
- CHALCOGENIDES; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SILICON COMPOUNDS; SILICON OXIDES; SIMULATION