Published September 15, 1995
| Version v1
Journal article
Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 52
- Journal Issue
- 12
- Journal Page Range
- [10 p.]
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 33060410
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; SILICON; SOFT X RADIATION; X-RAY EMISSION ANALYSIS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL ANALYSIS; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; IONIZING RADIATIONS; NONDESTRUCTIVE ANALYSIS; PNICTIDES; RADIATIONS; SEMIMETALS; X RADIATION
Optional Information
- Contract/Grant/Project number
- AC03-76SF00098
- Notes
- Journal Publication Date: September 15 1995
- Funding organization
- US Department of Energy (United States)
- Secondary number(s)
- LBNL/ALS--232