Published 1989
| Version v1
Journal article
Electrophysical properties of the ion-implanted p-InSb
Description
The donor property of silicon implanted into p-InSb has been ascertained experimentally. It is shown that pulsed irradiation lowers the radiation damage of the InSb surface and thus favors the making of ion-doped layers with good electrical parameters. (author)
Additional details
Publishing Information
- Journal Title
- Radiation Effects Express
- Journal Volume
- 2
- Journal Issue
- 5-6
- Series
- Radiat. Eff. Express.
- Journal Page Range
- 155-158
- ISSN
- 0888-7322
- CODEN
- REFEE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 21033175
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONY ALLOYS; ARGON IONS; CRYSTAL DOPING; INDIUM ALLOYS; INTERMETALLIC COMPOUNDS; ION IMPLANTATION; NEON IONS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PULSED IRRADIATION; SILICON; SILICON IONS; SILICON OXIDES; THIN FILMS
- Descriptors DEC
- ALLOYS; ATOMIC IONS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTS; FILMS; IONS; IRRADIATION; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS