Published 2013 | Version v1
Journal article

Proximity induced superconductivity in bilayer graphene

  • 1. Institute of Nanotechnology, Karlsruhe Institute of Technology (Germany)
  • 2. DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology (Germany)
  • 3. Institute for Solid-State Physics, Karlsruhe Institute of Technology (Germany)
  • 4. Institute of Physics, Karlsruhe Institute of Technology (Germany)
  • 5. Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba (Japan)

Description

Proximity induced superconductivity effect occurs when graphene is connected with close enough superconducting electrodes. Observations of Andreev reflection and induced supercurrents flowing through graphene sheets have already been reported in graphene. However, these effects have not been explored in bilayer graphene so far. By applying a perpendicular electric field, it is possible to open a gap in a bilayer graphene. This can be achieved in practice by designing a top gate in addition to the usual back gate. Our devices are produced on top of sapphire wafers by using transfer techniques and standard electron-beam lithography. The bilayers are sandwiched between two atomically flat hexagonal boron nitride multilayers which are both used as gate dielectric. By inducing a band gap into a bilayer graphene connected by two superconducting leads, the supercurrent could be switched off inducing a superconductor-insulator transition.

Additional details

Publishing Information

Journal Title
Verhandlungen der Deutschen Physikalischen Gesellschaft
Journal Issue
Regensburg 2013 issue
Series
Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 48(3)
Journal Page Range
[1 p.]
ISSN
0420-0195
CODEN
VDPEAZ

Conference

Title
DPG Spring meeting of the condensed matter section (SKM) together with the divisions microprobes, radiation and medical physics and working groups industry and business, young DPG
Dates
10-15 Mar 2013
Place
Regensburg (Germany)

Optional Information

Notes
Session: HL 28.14 Mo 16:00; No further information available