In situ monitoring of hydrogen-surfactant effect during Ge growth on Si(0 0 1) using coaxial impact-collision ion scattering spectroscopy and time-of-flight elastic recoil detection analysis

To clarify the mechanism of the hydrogen (H)-surfactant effect, we have performed in situ monitoring of the H-surfactant-mediated growth of Ge on Si(0 0 1), using coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA). It has been revealed that: (1) at a growth temperature of 350 deg. C, the Ge overlayer of the best quality could be achieved with an optimal flux density of H, and (2) above 350 deg. C, most of the adsorbed H atoms desorb from the growth front. The latter result indicates that the residence time of H atom on the growth front is an important factor for the surfactant effect