Influence of irradiation on injection processes in semiconductor

It is shown that a weak irradiation causing production of defects and vacancy-impurity complexes such as vacancy+charged deep impurity, decreases both the number of efficient recombination centres and the recombination rate with increasing excitation. It, in turn, improves the injection characteristics of the material. At the same time, strong radiation increases recombination and causes degradation of the injection characteristics. Decrease of the efficient recombination centres' concentration at the saturation conditions of recombination rate can cause periodic distribution of non-equilibrium carrier concentration, which indicates the beginning of self-organization processes. (authors)