Published October 3, 2011 | Version v1
Journal article Metadata-only

Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy

Creators

  • 1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan)
  • 2. Nanodevice Innovation Research Center and Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

Description

We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF2/Fe3Si heterostructures on Si(111) substrates, by selected-area molecular beam epitaxy (MBE) using electron-beam (EB) lithography. Clear negative differential resistances (NDRs) were observed in the current-voltage (I-V) characteristics at room temperature (RT). The reproducibility of the I-V characteristics was greatly improved, and approximately 40% of the FM-RTDs showed clear NDRs at RT.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.05.026

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.05.026;
PII
S0040-6090(11)01158-8;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
24
Journal Page Range
p. 8509-8511
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Asia-Pacific conference on semiconducting silicides science and technology towards sustainable optoelectronics
Acronym
APAC-SILICIDE 2010
Dates
24-26 Jul 2010
Place
Tsukuba (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43052275
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CALCIUM FLUORIDES; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FABRICATION; IRON SILICIDES; MOLECULAR BEAM EPITAXY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TUNNEL DIODES
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BEAMS; CALCIUM COMPOUNDS; CALCIUM HALIDES; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; EPITAXY; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; IRON COMPOUNDS; LEPTON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICIDES; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.