Investigation of thermal annealing effect on electron mobility in InAs irradiated crystals

InAs crystals were irradiated with 50 MeV electrons. Thermal annealing was performed at temperatUres 200 deg C, 300 deg C and 400 deg C. It is shown that temperature dependence of electron nobility is well described by point defects scattering theory, which shows non-creation of clusters during thermal ann ling. s showe too, that thermal annealing results in the formation of a considerable amount of acceptors. Their quantity is always fewer than the number of radiation donors