Published February 2018
| Version v1
Journal article
X-ray absorption fine structure investigation of the local structure of SnO2-doped ZnO films
- 1. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, 37673 (Korea, Republic of)
- 2. Department of Physics, Institute of Nano Science and Technology, Hanyang University, Seoul, 04763 (Korea, Republic of)
Description
Highlights: • Replacing ZnO with SnO2 caused Sn4+ to displace Zn2+ from sites in the crystal. • As SnO2 content increased, the surface of ZTO films became smooth due to decreasing grain sizes. • The resistivity decreased from 172 to 8.75 mΩ cm, and optical transmittance increased in the visible region. • The bandgap decreased from 3.25 to 3.13 eV at [SnO2] = 0–10%, respectively.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.matchemphys.2017.12.004Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2017.12.004;
- PII
- S0254058417309458;
Publishing Information
- Journal Title
- Materials Chemistry and Physics
- Journal Volume
- 206
- Journal Page Range
- p. 103-109
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49096549
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; FILMS; FINE STRUCTURE; GRAIN SIZE; OXIDATION; TIN IONS; TIN OXIDES; X RADIATION; ZINC IONS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL REACTIONS; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; IONS; MATERIALS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SIZE; TIN COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.