Published February 1, 1995
| Version v1
Journal article
A physical basis for irradiation-induced modification of thin-film stresses
Description
A mechanism is proposed for the modification of stresses in thin films by irradiation. A tensile stress causes preferential alignment of interstitial loops such that the normal to the plane of the loop is parallel to the direction of the stress. The aligned loops grow and produce a positive strain in the lattice, which relieves the initial stress. ((orig.))
Additional details
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 256
- Journal Issue
- 1-2
- Journal Page Range
- p. 116-119.
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Switzerland
- INIS RN
- 26052295
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHROMIUM; CREEP; DISLOCATIONS; INTERSTITIALS; PHYSICAL RADIATION EFFECTS; STRAINS; STRESSES; TENSILE PROPERTIES; THICKNESS; THIN FILMS; TIME DEPENDENCE
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; FILMS; LINE DEFECTS; MECHANICAL PROPERTIES; METALS; POINT DEFECTS; RADIATION EFFECTS; TRANSITION ELEMENTS