Published September 1997
| Version v1
Journal article
Photoelectric properties of GaAs/InAs quantum dot heterostructures
Creators
- 1. NI Fiziko-Tekhnicheskij Inst. pri Nizhegorodskom Gos. Universitete (Russian Federation)
- 2. RAN Inst. Fiziki Mikrostruktur, Nizhnij Novgorod (Russian Federation)
- 3. Nizhegorodskij Gos. Universitet im. N.I.Lobachevskogo (Russian Federation)
Description
Planar photoconductivity and capacitive photovoltage spectra in GaAs/InAs quantum dot heterostructures grown by MOCVD have been studied. Spectra of quantum dot photosensitivity have a peak shape that reflects the delta-like character of density of states. A photosensitivity band of the InAs monolayer quantum well has also been observed. An expression for the absorption coefficient of the quantum dot ensemble with a certain dimension distribution was obtained
Additional details
Additional titles
- Original title (Russian)
- Фотоэлектрические свойства генероструктур GaAs/InAs с квантовыми точками
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 31
- Journal Issue
- 9
- Journal Page Range
- p. 1100-1105
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 29067298
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; SEMICONDUCTOR JUNCTIONS; SPECTRA; SUPERCONDUCTING FILMS; THICKNESS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SENSITIVITY
Optional Information
- Notes
- 17 refs., 1 tab., 5 figs.