Published 1975
| Version v1
Book
Phase-transition-like annealing behaviour of heavily implanted GaP
- 1. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- London
- ISBN
- 0854981136
- Imprint Title
- Lattice defects in semiconductors, 1974. Invited and contributed papers from the international conference on lattice defects in semiconductors held in Freiburg, 22-25 July 1974
- Imprint Pagination
- p. 446-452.
- Journal Issue
- no. 23
- Series
- Institute of Physics Conference Series.
Conference
- Title
- International conference on lattice defects in semiconductors.
- Dates
- 22 Jul 1974.
- Place
- Freiburg, F.R. Germany.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 6216272
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; ANNEALING; BACKSCATTERING; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; ELECTRON SPIN RESONANCE; ELECTRONIC STRUCTURE; GALLIUM PHOSPHIDES; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; NITROGEN IONS; ORDER-DISORDER TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRICAL PROPERTIES; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; KEV RANGE; MAGNETIC RESONANCE; PHASE TRANSFORMATIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RESONANCE; SCATTERING; SPECTRA