Published April 2009 | Version v1
Journal article

Current oscillations in Si/CaF2 nanostructures

  • 1. Belarus state univ. of informatics and radioelectronics, Minsk (Belarus)

Description

A charge instability producing current oscillation in periodical Si/CaF2 nanostructure is considered. The mechanism of current self-oscillation based on grown of charge carrier transfer rate with increase of charge value on traps in the insulator is proposed. The equivalent circuit and design of nanoelectronic generator of oscillation based on Si/CaF2 nanostructure is proposed. The conditions of existence of stable current oscillation in the Si/CaF2 nanostructure for 0.02-30 GHz range are specified. (authors)

Additional details

Additional titles

Original title (Russian)
Колебания тока в наноструктуре Си/CaF

Publishing Information

Journal Title
Vestsi Natsyyanal'naj Akadehmii Navuk Belarusi. Seryya Fizika-Tehkhnichnykh Navuk
Journal Volume
2
Journal Page Range
p. 25-30
ISSN
1561-8358

Optional Information

Notes
11 refs., 4 figs.