Published 1976 | Version v1
Report Metadata-only

Radiation defects in silicon at ultra-high radiation doses

Creators

  • 1. Gor'kovskij Gosudarstvennyj Univ. (USSR). Issledovatel'skij Fiziko-Tekhnicheskij Inst.

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Радиационные дефекты в кремнии при сверхбольших дозах облучения

Publishing Information

Imprint Title
The interaction of atomic particles with solids
Imprint Pagination
no. 2 p. 22-65.
Report number
INIS-mf--3411

Conference

Title
4. all-union conference on interaction of atomic particles with solids.
Dates
Jun 1976.
Place
Kharkov, Ukrainian SSR.

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
9405657
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
AMORPHOUS STATE; ELECTRON SPIN RESONANCE; HIGH VACUUM; ION IMPLANTATION; KEV RANGE 10-100; LINE BROADENING; NEON IONS; P-TYPE CONDUCTORS; RADIATION DOSES; SILICON; SPATIAL DISTRIBUTION; V CENTERS
Descriptors DEC
CHARGED PARTICLES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MAGNETIC RESONANCE; POINT DEFECTS; RESONANCE; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES

Optional Information

Notes
Published in summary form only. Imprint:Vzaimodejstvie atomnykh chastits s tverdym telom.