Published June 21, 2016 | Version v1
Journal article

Spectroscopic studies of the physical origin of environmental aging effects on doped graphene

  • 1. Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China)
  • 2. Department of Physics, California Institute of Technology, Pasadena, California 91125 (United States)
  • 3. Department of Aeronautics, California Institute of Technology, Pasadena, California 91125 (United States)
  • 4. Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125 (United States)

Description

The environmental aging effect of doped graphene is investigated as a function of the organic doping species, humidity, and the number of graphene layers adjacent to the dopant by studies of the Raman spectroscopy, x-ray and ultraviolet photoelectron spectroscopy, scanning electron microscopy, infrared spectroscopy, and electrical transport measurements. It is found that higher humidity and structural defects induce faster degradation in doped graphene. Detailed analysis of the spectroscopic data suggest that the physical origin of the aging effect is associated with the continuing reaction of H2O molecules with the hygroscopic organic dopants, which leads to formation of excess chemical bonds, reduction in the doped graphene carrier density, and proliferation of damages from the graphene grain boundaries. These environmental aging effects are further shown to be significantly mitigated by added graphene layers.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
119
Journal Issue
23
Journal Page Range
p. 235301-235301.11
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2016 Author(s)