Investigations of semiconductor surfaces and interfaces by x-ray grazing incidence diffraction

Non-coplanar x-ray grazing incidence diffraction is an appropriate method to investigate the strain and compositional set-up of semiconductor nanostructures. Exploiting refraction effects at the air-sample interfaces, the penetration depth of the probing x-ray can by tailored between a few and several hundred nanometers below the surface. While the detected signal is Bragg-diffracted at a lattice plane directed perpendicular to the surface, the method possesses the capability for a depth-resolved analysis of the relaxation state in semiconductor multilayers. Beside vertically stacked structures, it can be applied for the investigation of laterally patterned nanostructures, such as free-standing and buried surface gratings. This article will introduce the reader to the experimental set-up, the resolution condition, and theoretical approaches necessary for running and interpreting GID-experiments, followed by a brief review of recent applications. (author)