Published November 1990 | Version v1
Journal article

Generation and relaxation of short lifetime defects in Bi4Ge3O12 crystals

  • 1. Ural'skij Politekhnicheskij Inst., Sverdlovsk (USSR)

Description

By the method of pulsed absorption spectroscopy and cathodoluminescence with time resolution formation and relaxation of short-lived radiation defects in pure and impurity crystals of Bi4Ge3O12 (BGO) are studied. Short-lived radiation-induced optical absorption in case of irradiation by dense beams of electrons of near the threshold energy is detected. Spectral and kinetic characteristics of absorption and luminescence induced by powerful electron beam are determined. The influence of iron impurity on the efficiency of generation and relaxation of short-lived absorption is studied

Additional details

Additional titles

Original title (Russian)
Генерация и релаксация короткоживущих радиационных дефектов в кристаллах Би

Publishing Information

Journal Title
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy
Journal Volume
26
Journal Issue
11
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
2348-2351
ISSN
0002-337X
CODEN
IVNMA