Published 1987 | Version v1
Report Metadata-only

DELPHI accelerator: Photoconductive switch development

Creators

Description

The present design for the DELPHI accelerator demands several high power switches which will close and open (toggle) repetitively at 25 MHz. They must stand off 250 kV and interrupt 5 kA. To meet this requirement, large-scale photoconductive semiconductor switches (PCSS) are being developed. Discussed here are immediate goals and recent results including 82 kV/cm and 2 kA with a single 1 inch diameter by 0.025 inch thick silicon wafer

Availability note (English)

Available from NTIS, PC A02; 3 as DE88001361.

Additional details

Publishing Information

Imprint Pagination
8 p.
Report number
SAND--87-2400C

Conference

Title
SDIO/DARPA services annual propagation review.
Dates
29 Sep - 1 Oct 1987.
Place
Monterey, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
19045725
Subject category
S43: PARTICLE ACCELERATORS; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACCELERATORS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; LASERS; PHOTOCONDUCTIVITY; PHOTOCONDUCTORS; SEMICONDUCTOR SWITCHES; SILICON; SWITCHING CIRCUITS; TESTING
Descriptors DEC
AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; SWITCHES

Optional Information

Notes
Paper copy only, copy does not permit microfiche production.
Secondary number(s)
CONF-8709146--15.