Published August 2004
| Version v1
Journal article
Analysis of the memory effect in a nitrogen-filled tube at 6.6 mbar pressure for different cathode materials using the time delay method
Creators
- 1. Faculty of Electronic Engineering, University of Nis, P.O. Box 73, 18001 (Serbia and Montenegro)
Description
The memory effect, due to postafterglow survival of some species which affect subsequent breakdown, was analyzed from the behavior of memory curves. In early afterglow, up to several tens of a millisecond, the memory effect in nitrogen is a consequence of the presence of positive ions formed by the collision between metastable molecules and highly vibrationally excited molecules remaining from the previous discharge. In late afterglow, the memory effect is due to N(4S) atoms created during the previous discharge and in early afterglow. When the atom density is reduced enough the breakdown is initiated by cosmic rays which always exists. In late afterglow in nitrogen the memory effect is very sensitive on cathode material
Additional details
Identifiers
- DOI
- 10.1063/1.1760583;
Publishing Information
- Journal Title
- Physics of Plasmas
- Journal Volume
- 11
- Journal Issue
- 8
- Journal Page Range
- p. 3778-3786
- ISSN
- 1070-664X
- CODEN
- PHPAEN
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36036515
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- AFTERGLOW; CATHODES; ELECTRICAL FAULTS; NITROGEN; PLASMA DENSITY; PLASMA PRESSURE
- Descriptors DEC
- ELECTRODES; ELEMENTS; NONMETALS
Optional Information
- Notes
- (c) 2004 American Institute of Physics.