Published May 2, 1988
| Version v1
Journal article
Effect of bias on the response of metal-oxide-semiconductor devices to low-energy x-ray and cobalt-60 irradiation
- 1. Sandia National Laboratories, Albuquerque, New Mexico 87185
Description
The response of metal-oxide-semiconductor (MOS) transistors and capacitors to high-energy Co-60 gamma and low-energy x-ray irradiation is evaluated as a function of gate bias during exposure. It is demonstrated that, in contrast to previous expectations, the relative response of MOS devices to Co-60 gamma and 10 keV x-ray irradiation cannot be explained simply in terms of electron-hole recombination and dose enhancement effects
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 52
- Journal Issue
- 18
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 1514-1516
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19063552
- Subject category
- S42: ENGINEERING; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITORS; COBALT 60; ELECTRICAL PROPERTIES; KEV RANGE 01-10; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RECOMBINATION; X RADIATION
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ENERGY RANGE; ENERGY STORAGE SYSTEMS; EQUIPMENT; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; KEV RANGE; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; TRANSISTORS; YEARS LIVING RADIOISOTOPES