Published June 1988 | Version v1
Journal article Metadata-only

Accumulation of E3 center in n-type GaAs under γ-irradiation in the 77-580K temperature range

Creators

  • 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.

Description

Investigation of the efficiency of E3-center accumulation (Ec-0.33 eV) during γ radiation of n-GaAs in the temperature range from 77 to 580 K in the neutral region (NR) and the space charge region (SCR) is carried out. The analytical model describing the efficiency of E3-center accumulation in SCR and NR at different radiation temperatures is suggested

Additional details

Additional titles

Original title (Russian)
Накопление E3-центров в н-GaAs при γ-облучении в интервале температур 77-580K

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
22
Journal Issue
6
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
1124-1126
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20009707
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANALYTICAL SOLUTION; E CENTERS; FERMI LEVEL; FRENKEL DEFECTS; GALLIUM ARSENIDES; GAMMA RADIATION; HIGH TEMPERATURE; LOW TEMPERATURE; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SPACE CHARGE; TEMPERATURE DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; GALLIUM COMPOUNDS; IONIZING RADIATIONS; MATERIALS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; VACANCIES