MeV P implants in silicon: experiments and simulation

Phosphorus ions at energies of 0.5 and MeV and 1 at a dose of 2x1013 at./cm2 were implanted into (100), (110) and (111) Si single crystals and into 2 μm thick amorphous Si layers. Different tilt and twist angles were used during implanting, in a random configuration, or along the principal axial and planar directions. Concentration profiles were determined by using both spreading resistance measurements and secondary ion mass spectrometry. The data are discussed and compared with Monte Carlo calculations using the MARLOWE code. A modified Oen-Robinson model was used to obtain an expression for the energy loss as a function of the impact parameter. The model fits well the experimental profiles of implants in channeling, along a random direction and in an amorphous layer. These results are discussed in terms of a variation of the electronic density within the different channels. (orig.)