Optimization of evaporation parameters and fabrication of natural Si target for in-beam gamma ray spectroscopy
- 1. Department of Physics, Panjab University, Chandigarh - 160014 (India)
- 2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi - 110067 (India)
- 3. Indian Institute of Technology, Delhi (India)
Description
The natural Si is hard, brittle crystalline solid with a blue-gray metallic luster. It is composed of three stable isotopes 28Si, 29Si and 30Si having abundance 92.2%, 4.7% and 3.1%, respectively. The primary goal of our experiment is to perform gamma-ray spectroscopy in the mass region A∼40, which is astrophysical important towards the endpoint of nova nucleosynthesis. For this, 12C beam is going to be used on 28Si target to populate nuclei by fusion evaporation reaction. As per reaction's optimized yield calculations, 28Si target of thickness ∼400–900 µg/cm2 on Gold (Au) backing of thickness 6-7 mg/cm2 has been proposed. As natural Si is cost-effective hence can be used for target fabrication trials to optimize evaporation parameters. Also, because of higher abundance of 28Si in Si, later can be used as back-up target. The Si targets were prepared successfully using rolling machine and electron beam coating unit with high vacuum environment and the final experiment will be carried out with Indian National Gamma Array (INGA) and Charge Particle Detector Array (CPDA) setup at IUAC, New Delhi
Additional details
Publishing Information
- Publisher
- Cotton University
- Imprint Place
- Guwahati (India)
- Imprint Title
- Proceedings of the DAE-BRNS symposium on nuclear physics. V. 66
- Imprint Pagination
- [1318 p.]
- Journal Page Range
- [2 p.]
Conference
- Title
- 66. DAE-BRNS symposium on nuclear physics
- Dates
- 1-5 Dec 2022
- Place
- Guwahati (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 54038037
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARBON 12 BEAMS; EVAPORATION; FABRICATION; GAMMA SPECTROSCOPY; SILICON 28 TARGET
- Descriptors DEC
- BEAMS; ION BEAMS; PHASE TRANSFORMATIONS; SPECTROSCOPY; TARGETS
Optional Information
- Notes
- Article No. G11