Published June 15, 2008 | Version v1
Journal article Metadata-only

Three-point bending fracture characteristics of three-dimensional-C/SiC with single-edge notch beam specimens

Creators

  • 1. Laboratory for High-Temperature Structural Composite Materials, Northwest Polytechnic University, Xi'an 710072 (China)
  • 2. Department of Materials Science and Engineering, Jiujiang University, Jiujiang 332005 (China)
  • 3. Department of Materials Science and Engineering, Xi'an University of Science and Technology, Xi'an 710054 (China)

Description

Loading-unloading properties of three-dimensional-C/SiC composites at ambient temperature were studied by three-point bending experiments with single-edge notch beam specimens. Crack growth was examined by scanning electron microscopy. The whole propagation process of a notch consists of a transient state and a steady state. The crack growth resistance is derived based on energy evaluation by a graphical method taking into account the non-linear fracture of the composites. The maximum value of the crack growth resistance, corresponding to the transition of the notch into cracks, reaches about 303.7 kJ m-2 when the ratio of equivalent crack length to sample thickness amounts to 0.13. The energy for the steady crack growth is about 20 kJ m-2

Availability note (English)

Available from http://dx.doi.org/10.1016/j.msea.2006.09.187

Additional details

Identifiers

DOI
10.1016/j.msea.2006.09.187;
PII
S0921-5093(07)00953-7;

Publishing Information

Journal Title
Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
Journal Volume
483-484
Journal Page Range
p. 123-126
ISSN
0921-5093
CODEN
MSAPE3

Conference

Title
14. international conference on the strength of materials
Dates
4-9 Jun 2006
Place
Xian (China)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40025479
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMBIENT TEMPERATURE; BENDING; CARBON; CRACK PROPAGATION; CRACKS; EVALUATION; FRACTURES; NOTCHES; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; DEFORMATION; ELECTRON MICROSCOPY; ELEMENTS; FAILURES; MICROSCOPY; NONMETALS; SILICON COMPOUNDS

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.