Published July 11, 2007
| Version v1
Journal article
The effect of well coupling on effective masses in the InGaAsN material system
Creators
- 1. Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, ON, N2L 3C5 (Canada)
Description
The effect of well coupling on effective masses for InGaAsN based heterostructures is numerically analysed. The analysis is based on the 10 x 10 Luttinger-Kohn Hamiltonian which couples valence, conduction and nitrogen bands. Our results show that by adjusting the nitrogen composition and/or the barrier width, effective masses can be effectively modified
Additional details
Identifiers
- DOI
- 10.1088/0953-8984/19/27/276202;
- PII
- S0953-8984(07)50950-1;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 19
- Journal Issue
- 27
- Journal Page Range
- p. 276202
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38080292
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COUPLING; EFFECTIVE MASS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; HAMILTONIANS; INDIUM NITRIDES; NITROGEN; VALENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MASS; MATHEMATICAL OPERATORS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; QUANTUM OPERATORS