Published February 16, 1989 | Version v1
Journal article Metadata-only

Argon ion implantation influence on phase formation and structure of nickel silicides

Creators

  • 1. AN Belorusskoj SSR, Minsk (Byelorussian SSR). Inst. Fiziki Tverdogo Tela i Poluprovodnikov
  • 2. Minskij Radiotekhnicheskij Inst., Minsk (Byelorussian SSR)
  • 3. Ural'skij Politekhnicheskij Inst., Sverdlovsk (USSR)

Description

The relationship between phase formation in the Ni-Si system during solid-state reaction stimulated by argon ion implantation and structural transformations in nickel silicide films is investigated. The epitaxial nickel silicide is found to consist only of the NiSi2 phase. The epitaxial disilicide film is shown to have thickness of more than 300 nm with a degree of perfection characterized by χmin = 0.1 when the reaction is stimulated by ion implantation. (author)

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
111
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
499-505
ISSN
0031-8965
CODEN
PSSAB

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
20053881
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; ARGON 40 BEAMS; CHEMICAL PREPARATION; CRYSTAL-PHASE TRANSFORMATIONS; ELECTRIC CONDUCTIVITY; EPITAXY; FILMS; ION CHANNELING; ION IMPLANTATION; NICKEL; NICKEL SILICIDES; PHASE STUDIES; RADIATION DOSES; RUTHERFORD SCATTERING; SILICON; X-RAY DIFFRACTION
Descriptors DEC
BEAMS; CHANNELING; COHERENT SCATTERING; DIFFRACTION; ELASTIC SCATTERING; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; ION BEAMS; METALS; NICKEL COMPOUNDS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SYNTHESIS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS