Published 1992
| Version v1
Miscellaneous
Relativistic electron transmission through silicon thin crystals
Description
Consideration is given to results of experimental study of 1200 MeV electron transmission into small solid angle forward through silicon thin crystals, depending on orientation of crystallographic axis. This dependence, observed in experiments, can be explained qualitatively by cooperation effect of mechanisms of azimuthal scattering on atom chains and vectorial angle scattering, related with initial particle disrtibution by energies of lateral motion in chain field. 2 refs.; 3 figs
Additional details
Additional titles
- Original title (Russian)
- Прохождение релятивисцких электронов через тонкие кристаллы кремния
Publishing Information
- Imprint Title
- Proceedings of 21. All-Union conference on physics of charged particles interaction with crystals
- Imprint Pagination
- 174 p.
- Journal Page Range
- p. 9-11.
- Report number
- INIS-RU--361
Conference
- Title
- 21. All-Union conference on physics of charged particles interaction with crystals.
- Dates
- 27-29 May 1991.
- Place
- Moscow (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25020735
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRON CHANNELING; ENERGY SPECTRA; GEV RANGE 01-10; INCIDENCE ANGLE; MONOCRYSTALS; MULTIPLE SCATTERING; ORIENTATION; SILICON; THICKNESS
- Descriptors DEC
- CHANNELING; CRYSTALS; DIMENSIONS; ELEMENTS; ENERGY RANGE; GEV RANGE; SCATTERING; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Imprint:Materialy 21. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.;Chast' 1. Fizika orientatsionnykh ehffektov.