Research on single event effects of pulsed laser simulation

[Background] Pulsed laser haa been widely used in the research of single particle effects (SEE) in integrated circuits and devices. Compared with heavy ion sources, it is easier to obtain spatial and temporal information through pulsed laser-induced SEE. [Purpose] This study aims to compare the linear energy transfer (LET) of SEE in silicon devices between single-photon and two-photon. [Methods] The differences of LET were compared by formula derivation and experimental comparison. Three kinds of silicon devices, i.e., differential comparator, static random access memory (SRAM) and bipolar junction transistor, were taken as design under test (DUT) units for both the single-photon absorption (SPA) and two-photon absorption (TPA) experiments. [Results] The different processes of SPA and TPA induced single particle effect are verified, and comparison results show that there is a quantitative relationship between energy and LET. [Conclusions] It is reasonable to have different equivalence relations between energy and LET. SPA and TPA need different LET values in single particle effect. (authors)