Published May 15, 2000
| Version v1
Journal article
Nitrogen-induced levels in GaAs1-xNx studied with resonant Raman scattering
- 1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
Description
Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level E+ located in the conduction band of GaAs1-xNx (0.001≤x≤0.022). Our data demonstrate that the E+ state is derived from the nitrogen-induced Γ-L mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states. (c) 2000 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 61
- Journal Issue
- 20
- Journal Page Range
- p. 13687-13690
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 32060205
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ELECTRONIC STRUCTURE; EXPERIMENTAL DATA; GALLIUM ARSENIDES; GALLIUM NITRIDES; IMPURITIES; NITROGEN; RAMAN SPECTRA
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DATA; ELEMENTS; GALLIUM COMPOUNDS; INFORMATION; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; NUMERICAL DATA; PNICTIDES; SPECTRA
- Proposed descriptors and Free-text terms
- gallium arsenide; III-V semiconductors; wide band gap semiconductors; impurity states; localised states