Published November 2001 | Version v1
Journal article Metadata-only

Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

Creators

  • 1. Fudan Univ., Shanghai (China). Dept. of Electronic Engineering

Description

Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C4F8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

Additional details

Publishing Information

Journal Title
High Technology Letters
Journal Volume
11
Journal Issue
11
Journal Page Range
p. 5-8
ISSN
1002-0470

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
34043798
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ACETIC ACID ESTERS; ARGON; CHEMICAL BONDS; CHEMICAL PREPARATION; CHEMICAL STATE; CHEMICAL VAPOR DEPOSITION; FLUORIDES; FOURIER TRANSFORMATION; INFRARED SPECTRA; PLASMA PRESSURE; SEMICONDUCTOR MATERIALS; SILICATES; SILICON OXIDES; STABILITY; THIN FILMS; X-RAY SPECTROSCOPY
Descriptors DEC
CARBOXYLIC ACID ESTERS; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELEMENTS; ESTERS; FILMS; FLUIDS; FLUORINE COMPOUNDS; GASES; HALIDES; HALOGEN COMPOUNDS; INTEGRAL TRANSFORMATIONS; MATERIALS; NONMETALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RARE GASES; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY; SURFACE COATING; SYNTHESIS; TRANSFORMATIONS